Semiconductor device and method for manufacturing the same

ABSTRACT

According to one embodiment, a semiconductor device includes a channel formation region of first conductivity type, a first offset region of second conductivity type, a first insulating region, a first liner layer, a first semiconductor region of second conductivity type, a second semiconductor region of second conductivity type, a gate insulating film, and a gate electrode. The first liner layer is provided between the first offset region and the first insulating region. The first semiconductor region of second conductivity type is provided on the side opposite to the channel formation region sandwiching the first insulating region therebetween and having impurity concentration higher than that of the first offset region. The second semiconductor region of second conductivity type is provided on the side opposite to the first semiconductor region sandwiching the channel formation region therebetween and having impurity concentration higher than that of the first offset region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2010-205495, filed on Sep. 14,2010; the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor deviceand a method for manufacturing the same.

BACKGROUND

In MOS field effect transistors (MOSFET), a structure in which aninsulator is buried in an offset region (drift region) (STI; shallowtrench isolation) is known.

When this type of MOSFET is operated, a carrier moves by going aroundbelow the buried insulator.

Thus, since a moving distance becomes longer by the portion going aroundbelow the insulator, there is a fear that electric resistance is raised.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view for illustrating a semiconductor deviceaccording to a first embodiment;

FIG. 2 is a cross-sectional view for illustrating a semiconductor deviceaccording to a second embodiment;

FIG. 3 is a cross-sectional view for illustrating a semiconductor deviceaccording to a third embodiment;

FIG. 4 is a cross-sectional view for illustrating a semiconductor deviceaccording to a fourth embodiment;

FIGS. 5A to 5I are process cross-sectional views illustrating a methodfor manufacturing the semiconductor device according to the fifthembodiment;

FIGS. 6A to 6I are process cross-sectional views illustrating a methodfor manufacturing the semiconductor device according to the sixthembodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor device includesa channel formation region of first conductivity type, a first offsetregion of second conductivity type, a first insulating region, a firstliner layer, a first semiconductor region of second conductivity type, asecond semiconductor region of second conductivity type, a gateinsulating film, and a gate electrode. The first insulating region isburied in the surface of the first offset region. The first liner layeris provided between the first offset region and the first insulatingregion. The first semiconductor region of second conductivity type isprovided on the side opposite to the channel formation regionsandwiching the first insulating region therebetween. The firstsemiconductor region of second conductivity type has impurityconcentration higher than that of the first offset region. The secondsemiconductor region of second conductivity type is provided on the sideopposite to the first semiconductor region sandwiching the channelformation region therebetween. The second semiconductor region of secondconductivity type has impurity concentration higher than that of thefirst offset region. The gate insulating film is provided on the channelformation region and the first offset region. The gate electrode isprovided on the gate insulating film.

In general, according to another embodiment, a method is disclosed formanufacturing a semiconductor device. The method can include forming afirst trench in the surface of a substrate. The method can includeforming a first liner layer inside the first trench. The method caninclude forming a first insulating region by burying an insulatingmaterial inside the first trench on which the first liner layer has beenformed. The method can include forming an insulating film on the surfaceof the substrate. The method can include forming a channel formationregion of first conductivity type inside the surface of the substratewhich does not include a region where the first trench has been formed.The method can include forming a first offset region of secondconductivity type inside the surface of the substrate which includes aregion where the first trench has been formed. The method can includeforming a first semiconductor region of second conductivity type havingimpurity concentration higher than that of the first offset regioninside the surface of the substrate on the side opposite to the channelformation region sandwiching the first insulating region therebetween.The method can include forming a second semiconductor region of secondconductivity type having impurity concentration higher than that of thefirst offset region inside the surface of the substrate on the sideopposite to the first semiconductor region sandwiching the channelformation region therebetween along with the forming the firstsemiconductor region. The method can include forming a gate electrodethrough the insulating film formed on the surfaces of the channelformation region and the first offset region.

Various embodiments will be described hereinafter with reference to theaccompanying drawings. In the drawings, like components are marked withthe same reference numerals and a detailed description thereof isomitted as appropriate.

First Embodiment

FIG. 1 is a cross-sectional view for illustrating a semiconductor deviceaccording to a first embodiment.

FIG. 1 exemplifies an example in which a semiconductor device 1 is anLDMOSFET (Laterally Diffused MOSFET).

FIG. 1 illustrates a semiconductor device formed on a region divided byan element separation layer (DTI; Deep Trench Isolation) or PN-junctionseparation or the like, not shown.

As illustrated in FIG. 1, on the surface region of a p-type (firstconductivity type) or an n-type (second conductivity type) siliconsubstrate 2 provided on the semiconductor device 1, a p⁻-type channelformation region 3 and a n⁻-type offset region 4 (first offset region)formed adjacent to the channel formation region 3 are formed. On thesurface region of the p⁻-type channel formation region 3, an n⁺-typesource region 5 (second semiconductor region) is formed. On the surfaceregion of the n⁻type offset region 4, an n⁺-type drain region 6 (firstsemiconductor region) is formed.

The offset region 4 is isolated from the channel formation region 3, anda part of the silicon substrate 2 intervenes between the offset region 4and the channel formation region 3.

The source region 5 has impurity concentration higher than that of theoffset region 4. The drain region 6 has impurity concentration higherthan that of the offset region 4.

That is, the n⁺-type source region 5 is formed on the side opposite tothe drain region 6 sandwiching the channel formation region 3 betweenthem and has impurity concentration higher than that of the offsetregion 4.

The n⁺-type drain region 6 is formed on the side opposite to the channelformation region 3 sandwiching an insulating region 9 between them andhas impurity concentrations higher than that of the offset region 4.

In this specification, the “impurity concentration” refers to theconcentration of the impurities contributing to conductivity of asemiconductor material and if the impurity which becomes a donor and theimpurity which becomes an acceptor are both contained in thesemiconductor material, it refers to the concentration of thoseexcluding an offset of the donor and the acceptor in the activatedimpurities.

On the surface region of the offset region 4, a trench 7 (first trench)is formed, and the insulating region 9 (first insulating region) isburied in the trench 7 through a liner layer 8 (first liner layer). Thatis, the insulating region 9 is buried in the surface of the offsetregion 4. The semiconductor device 1 has a structure in which theinsulating region 9 is buried in the surface region of the offset region4 between the source region 5 and the drain region 6 (STI; ShallowTrench Isolation).

The trench 7 is formed in the surface region of the offset region 4between the drain region 6 and the source region 5. One of the sidefaces of the trench 7 is in contact with the drain region 6. The upperface of the trench 7 is opened in the upper face of the gate insulatingfilm 10. The lower face of the trench 7 is located below the lower faceof the drain region 6 and above the lower face of the offset region 4.

The liner layer 8 is formed between the offset region 4 and theinsulating region 9. The liner layer 8 which is a single layer isexemplified but the liner layer may be formed of a plurality of layers.

A part of the upper face of the insulating region 9 is in contact with apart of the lower face of a gate electrode 11. The insulating region 9may be formed of an insulating material such as silicon oxide, forexample.

On the surface of the silicon substrate 2, a gate insulating film 10 isformed. That is, the gate insulating film 10 is formed on the channelformation region 3 and the offset region 4. On the gate insulating film10, the gate electrode 11 formed of polysilicon into which impuritiesare introduced is formed, for example. The gate electrode 11 is providedon a region immediately above the region between the drain region 6 andthe source region 5.

On the gate insulating film 10, the gate electrode 11 and the like, aninsulating film 12 made of silicon oxide, for example, is provided. Onthe insulating film 12, contacts 13 to 15 which penetrate the insulatingfilm 12 are provided. On the surface of the insulating film 12, wires 16to 18 are provided. The lower end of the contact 13 is connected to thedrain region 6, while the upper end is connected to the wire 16. Thelower end of the contact 14 is connected to the gate electrode 11, whilethe upper end is connected to the wire 17. The lower end of the contact15 is connected to the source region 5, while the upper end is connectedto the wire 18.

Subsequently, the structure in which the insulating region 9 is buriedin the surface region of the offset region 4 (STI; Shallow TrenchIsolation) will be further exemplified.

As described above, the semiconductor device 1 is formed on a regiondivided by an element separation layer (DTI; Deep Trench Isolation),PN-junction separation or the like, not shown.

That is, the insulating region 9 buried in the surface region of theoffset region 4 is different from the element separation layer thatseparates the semiconductor devices 1 from each other. That is, theinsulating region 9 is formed in order to protect a gate portion if ahigh voltage is applied. Thus, by forming the insulating region 9, abreakdown voltage between the source region 5 and the drain region 6 canbe raised.

When the semiconductor device 1 is to be operated, a carrier moves bygoing around below the insulating region 9 buried in the trench 7 asindicated by an arrow A in FIG. 1. Thus, since a moving distance becomeslonger by a portion going around below the insulating region 9, there isa fear that electric resistance is raised. Thus, in the embodiment, theliner layer 8 is formed along the moving path (current path) of thecarrier so as to reduce the electric resistance.

In this case, if a moving degree of the carrier can be increased, theelectric resistance can be reduced. In order to increase the movingdegree of the carrier, it is only necessary that tensile stress isgenerated in silicon. That is, it is only necessary to generate tensilestress in a portion (interface portion) where the liner layer 8 is incontact with the offset region 4 or the drain region 6 by forming theliner layer 8 in which compression stress is generated.

For example, it is only necessary to form the liner layer 8 made of amaterial having a lattice constant different from the lattice constantof silicon. As such liner layer 8, those formed of at least any ofsilicon nitride and silicon oxide nitride, for example, can beexemplified.

Also, if the tensile stress generated in the offset region 4 or thedrain region 6 is too large, there is a fear that a split or a crackmight occur in the offset region 4 or the drain region 6. Thus, thethickness of the liner layer 8 is preferably made appropriate so thatthe excessive tensile stress does not occur.

In this case, by setting the thickness of the liner layer 8 toapproximately 10 to 20 nm, electric resistance can be reduced and also,occurrence of excessive tensile stress in the offset region 4 or thedrain region 6 can be suppressed.

Also, as described above, the breakdown voltage can be raised by formingthe insulating region 9, but the breakdown voltage can be further raisedby forming the liner layer 8.

For example, assuming that the insulating region 9 is formed of siliconoxide and the liner layer 8 is formed of silicon nitride havingdielectric constant higher than that of silicon oxide, electric fieldsgenerated in the offset region 4 or the drain region 6 can be affected.Thus, the breakdown voltage can be further raised.

Also, the liner layer 8 may be formed partially on the side face or thelower face of the trench 7. However, as illustrated in FIG. 1, the linerlayer 8 is preferably formed continuously on the side face or the lowerface of the trench 7.

According to the embodiment, since the liner layer 8 is formed along themoving path (current path) of the carrier, electric resistance can bereduced. Also, the breakdown voltage can be improved. Thus, improvementof energy efficiency, reduction of a silicon area, reduction of amanufacturing cost and the like can be realized.

Second Embodiment

The exemplification in FIG. 1 is formation of the liner layer of aninsulating material, but the liner layer may be formed of a conductivematerial.

In this case, a liner layer 8 a (first liner layer) formed of aconductive material having a lattice constant different from the latticeconstant of silicon may be formed. For example, the liner layer 8 a maybe formed of a conductive material or the like whose lattice constant isadjusted by solid solution of another semiconductor substance insilicon. Such conductive materials include silicon germanium, forexample. The liner layer 8 a which is a single layer is exemplified butthe liner layer may be formed of a plurality of layers.

By forming the liner layer 8 a such that compression stress isgenerated, tensile stress can be generated in a portion (interfaceportion) where the liner layer 8 a is in contact with the offset region4 or the drain region 6.

Since reduction of electric resistance by forming the liner layer 8 asuch that compression stress is generated or ensuring of appropriatethickness of the liner layer 8 a and the like are similar to theabove-described liner layer 8, the explanation will be omitted.

In this case, since the liner layer 8 a is formed of a conductivematerial, short-circuit of the gate electrode 11 and the offset region 4and the like needs to be prevented.

FIG. 2 is a cross-sectional view for illustrating a semiconductor deviceaccording to a second embodiment.

FIG. 2 illustrates a semiconductor device formed on a region divided bythe element separation layer (DTI; Deep Trench Isolation), PN-junctionseparation or the like, not shown.

As illustrated in FIG. 2, the insulating region 9 and the liner layer 8a are formed on a semiconductor device 1 a. In the embodiment, the linerlayer 8 a is formed of a conductive material such as silicon germanium.

Also, in order to prevent short-circuit of the gate electrode 11 and theoffset region 4 and the like, the liner layer 8 a is formed on the lowerface of the trench 7. The liner layer 8 a may be formed on the side faceof the trench 7 to such a degree that short-circuit does not occur.

According to the embodiment, since the liner layer 8 a is formed alongthe moving path (current path) of the carrier, electric resistance canbe reduced. Thus, improvement of energy efficiency, reduction of asilicon area, reduction of a manufacturing cost and the like can berealized.

Third Embodiment

FIG. 3 is a cross-sectional view for illustrating a semiconductor deviceaccording to a third embodiment.

FIG. 3 exemplifies a case in which a semiconductor device 20 is powerMOSFET as an example.

FIG. 3 illustrates a semiconductor device formed on a region divided bythe element separation layer (DTI; Deep Trench Isolation), PN-junctionseparation or the like, not shown.

As illustrated in FIG. 3, on the surface region of a p-type or n-typesilicon substrate 22 provided on the semiconductor device 20, an n⁻-typeoffset region 24 a (second offset region) and an n⁻-type offset region24 b (first offset region) formed adjacent to the offset region 24 a areformed.

That is, the n⁻-type offset region 24 a is provided between a channelformation region 23 and a source region 25 and has impurityconcentration lower than that of the source region 25.

Also, an n⁺-type source region 25 (second semiconductor region) havingimpurity concentrations higher than that of the offset region 24 b isformed with at least a part thereof formed on the surface region of theoffset region 24 a.

Also, an n⁺-type drain region 26 (first semiconductor region) havingimpurity concentrations higher than that of the offset region 24 b isformed with at least a part thereof formed on the surface region of theoffset region 24 b.

Also, the p⁻-type channel formation region 23 is formed between thesource region 25 and the drain region 26.

That is, the n⁺-type source region 25 is formed on the side opposite tothe drain region 26 sandwiching the channel formation region 23 and aninsulating region 29 a between them and has impurity concentrationhigher than that of the offset region 24 b.

The n⁺-type drain region 26 is formed on the side opposite to thechannel formation region 23 sandwiching an insulating region 29 bbetween them and has impurity concentration higher than that of theoffset region 24 b.

A trench 27 a (second trench) is formed in the offset region 24 a, andthe insulating region 29 a (second insulating region) is buried in thetrench 27 a through a liner layer 28 a (second liner layer).

A trench 27 b (first trench) is formed in the offset region 24 b, andthe insulating region 29 b (first insulating region) is buried in thetrench 27 b through a liner layer 28 b (first liner layer).

That is, the insulating region 29 a is buried in the surface of theoffset region 24 a. The insulating region 29 b is buried in the surfaceof the offset region 24 b.

That is, the semiconductor device 20 has a structure in which theinsulating region 29 a is buried in the surface region of the offsetregion 24 a and the insulating region 29 b is buried in the surfaceregion of the offset region 24 b (STI; shallow trench isolation).

The trench 27 a is formed in the surface region of the offset region 24a. One of the side faces of the trench 27 a is in contact with thesource region 25, while the other side face is in contact with thechannel formation region 23. The upper face of the trench 27 a is openedin the upper face of a gate insulating film 30. The lower face of thetrench 27 a is located below the lower face of the source region 25 andlocated above the lower face of the offset region 24 a.

The trench 27 b is formed in the surface region of the offset region 24b. One of the side faces of the trench 27 b is in contact with the drainregion 26, while the other side face is in contact with the channelformation region 23. The upper face of the trench 27 b is opened in theupper face of the gate insulating film 30. The lower face of the trench27 b is located below the lower face of the drain region 26 and locatedabove the lower face of the offset region 24 b.

In this case, the trench 27 a and the trench 27 b may be formed so thatthey are symmetric with respect to a gate electrode 31.

The liner layer 28 a is formed between the offset region 24 a and theinsulating region 29 a. The liner layer 28 b is formed between theoffset region 24 b and the insulating region 29 b. The liner layers 28 aand 28 b which are single layers are exemplified but each of them may beformed of a plurality of layers.

The liner layers 28 a and 28 b are formed of a material having a latticeconstant different from the lattice constant of silicon.

At least either of the liner layer 28 a and the liner layer 28 b may beformed of a material having a lattice constant different from thelattice constant of silicon. In this case, both the liner layers 28 aand 28 b are preferably formed of a material having the lattice constantdifferent from the lattice constant of silicon.

The liner layers 28 a and 28 b are formed of at least either of siliconnitride and silicon oxide nitride.

The insulating regions 29 a and 29 b may be formed of an insulatingmaterial such as silicon oxide, for example.

On the surface of the silicon substrate 22, the gate insulating film 30is formed. That is, the gate insulating film 30 is formed on the channelformation region 23 and on the offset regions 24 a and 24 b. On the gateinsulating film 30, the gate electrode 31, for example, formed ofpolysilicon into which impurities are introduced is formed. The gateelectrode 31 is provided on a region immediately above the channelformation region 23.

On the gate insulating film 30 and the gate electrode 31, an insulatingfilm 32 made of silicon oxide, for example, is formed. On the insulatingfilm 32, the contacts 13 to 15 which penetrate the insulating film 32are provided. On the surface of the insulating film 32, the wires 16 to18 are provided. The lower end of the contact 13 is connected to thedrain region 26, while the upper end is connected to the wire 16. Thelower end of the contact 14 is connected to the gate electrode 31, whilethe upper end is connected to the wire 17. The lower end of the contact15 is connected to the source region 25, while the upper end isconnected to the wire 18.

Subsequently, the structure in which the insulating regions 29 a and 29b are buried in the surface region of the offset regions 24 a and 24 b(STI; Shallow Trench Isolation) will be further exemplified.

As described above, the semiconductor device 20 is formed on a regiondivided by the element separation layer (DTI; Deep Trench Isolation),PN-junction separation or the like, not shown.

That is, the insulating regions 29 a and 29 b formed on the surfaceregions of the offset regions 24 a and 24 b are different from theelement separation layer that separates the semiconductor devices 20from each other. That is, the insulating regions 29 a and 29 b areformed in order to protect a gate portion if a high voltage is applied.Thus, by forming the insulating regions 29 a and 29 b, a breakdownvoltage between the source region 25 and the drain region 26 can beraised.

Here, when the semiconductor device 20 is operated, a carrier moves bygoing around below the insulating region 29 a buried in the trench 27 aand the insulating region 29 b buried in the trench 27 b as indicated byan arrow B in FIG. 3. Thus, since a moving distance becomes longer by aportion going around below the insulating regions 29 a and 29 b, thereis a fear that electric resistance is raised. Thus, in the embodiment,the liner layers 28 a and 28 b are formed along the moving path (currentpath) of the carrier so as to reduce the electric resistance. That is,by forming the liner layers 28 a and 28 b similar to the above-describedliner layer 8, electric resistance is reduced. Since the liner layers 28a and 28 b can be made similar to the liner layer 8, the detaileddescription of them will be omitted.

According to the embodiment, since the liner layers 28 a and 28 b areformed along the moving path (current path) of the carrier, electricresistance can be reduced. Also, the breakdown voltage can be improved.Thus, improvement of energy efficiency, reduction of a silicon area,reduction of a manufacturing cost and the like can be realized.

Fourth Embodiment

The exemplification in FIG. 3 is the case in which the liner layer isformed of an insulating material, but the liner layer may also be formedof a conductive material.

FIG. 4 is a cross-sectional view for illustrating a semiconductor deviceaccording to a fourth embodiment.

FIG. 4 illustrates a semiconductor device formed on a region divided bythe element separation layer (DTI; Deep Trench Isolation), PN-junctionseparation or the like, not shown.

As illustrated in FIG. 4, the insulating regions 29 a and 29 b, a linerlayer 28 c (second liner layer), and a liner layer 28 d (first linerlayer) are formed on a semiconductor device 20 a.

In the embodiment, the liner layers 28 c and 28 d formed of a conductivematerial having a lattice constant different from the lattice constantof silicon may be formed. For example, the liner layers 28 c and 28 dmay be formed of a conductive material whose lattice constant isadjusted by solid solution of another semiconductor substance insilicon. Such conductive materials include silicon germanium, forexample. The liner layers 28 c and 28 d which are single layers areexemplified but the liner layer may be formed of a plurality of layers.

Also, at least either of the liner layer 28 c and the liner layer 28 dmay be formed of a conductive material having a lattice constantdifferent form the lattice constant of silicon. In this case, it ispreferable that both the liner layers 28 c and 28 d are formed of aconductive material having the lattice constant different from thelattice constant of silicon.

Since the liner layers 28 c and 28 d can be made similar to theabove-described liner layer 8 a, detailed description will be omitted.

Also, in order to prevent short-circuit of the gate electrode 11 and theoffset regions 24 a, 24 b and the like, the liner layers 28 c and 28 dare formed on the lower face of the trenches 27 a and 27 b. The linerlayers 28 c and 28 de may be formed on the side faces of the trenches 27a and 27 b to such a degree that short-circuit does not occur.

According to the embodiment, since the liner layers 28 c and 28 d areformed along the moving path (current path) of the carrier, the electricresistance can be reduced. Thus, improvement of energy efficiency,reduction of a silicon area, reduction of a manufacturing cost and thelike can be realized.

Subsequently, a manufacturing method of the semiconductor deviceaccording to the embodiment will be exemplified.

Fifth Embodiment

FIGS. 5A to 51 are process cross-sectional views illustrating a methodfor manufacturing the semiconductor device according to the fifthembodiment. Also, FIGS. 5A to 51 exemplify an example in which thesemiconductor device 1 to be manufactured is an LDMOSFET (LaterallyDiffused MOSFET).

FIGS. 5A to 51 illustrate a state in which a semiconductor device isformed on a region divided by the element separation layer (DTI; DeepTrench Isolation), PN-junction separation or the like, not shown.

First, as illustrated in FIG. 5A, the trench 7 is formed in a regionwhere the offset region 4 of the p-type or n-type silicon substrate 2 isto be formed. That is, the trench 7 is formed on the surface region ofthe silicon substrate 2. In this case, the trench 7 can be formed byetching the silicon substrate 2 by using an RIE (Reactive Ion Etching)method or the like. Subsequently, as illustrated in FIG. 5B, the linerlayer 8 is formed inside the trench 7. That is, a film 58 which becomesthe liner layer 8 is formed on the surface of the silicon substrate 2and inside the trench 7. The formation of the film 58 can be made byusing a CVD (Chemical Vapor Deposition) method or the like.

The film 58 may be a film formed of a material having a lattice constantdifferent from the lattice constant of silicon. For example, the filmmay be formed at least either of silicon nitride and silicon oxidenitride.

Also, as described above, the film may be formed of a conductivematerial such as silicon germanium. However, if the film is formed of aconductive material, the film is to be formed at a predeterminedlocation such as on the lower face of the trench 7 as described above.The example in which the film to be formed is a single layer isexemplified, but the film may be formed of a plurality of layers.

Subsequently, as illustrated in FIG. 5C, a film 59 which becomes theinsulating region 9 is formed. At this time, the inside of the trench 7is filled with the film 59 to be formed. That is, the insulating region9 is formed by burying the insulating material inside the trench 7 onwhich the film 58 which becomes the liner layer 8 has been formed.

The formation of the film 59 can be made by using the CVD (ChemicalVapor Deposition) method, for example.

The film 59 may be formed of an insulating material such as siliconoxide, for example.

Subsequently, as illustrated in FIG. 5D, flattening is performed untilthe surface of the silicon substrate 2 is exposed. The flattening may beperformed by using a CMP (Chemical Mechanical Polishing) method, forexample.

By performing such flattening, the liner layer 8 is formed inside thetrench 7, and the insulating material (the insulating region 9) isburied inside the trench 7.

Subsequently, as illustrated in FIG. 5E, the gate insulating film 10 isformed on the surface of the silicon substrate 2. That is, the surfaceof the silicon substrate 2 is oxidized, and the gate insulating film 10is formed. The formation of the gate insulating film 10 can be made byusing a thermal oxidation method, for example.

Subsequently, as illustrated in FIG. 5F, the channel formation region 3and the offset region 4 are formed. That is, the p-type channelformation region 3 is formed inside the surface of the silicon substrate2 which does not include the region where the trench 7 has been formed.Also, the n-type offset region 4 is formed inside the surface of thesilicon substrate 2 which includes the region where the trench 7 hasbeen formed.

For example, the channel formation region 3 and the offset region 4 canbe formed by implanting a boron ion into the region where the channelformation region 3 is to be formed, by implanting a phosphorous ion intothe region where the offset region 4 is to be formed, and by applyingheat treatment.

Subsequently, as illustrated in FIG. 5G, the gate electrode 11 isformed.

That is, the gate electrode 11 is formed through the gate insulatingfilm 10 formed on the surface of the channel formation region 3 and theoffset region 4.

The gate electrode 11 may be formed of polysilicon into which impuritiesare introduced, for example.

Subsequently, as illustrated in FIG. 5H, the source region 5 and thedrain region 6 are formed.

That is, inside the surface of the silicon substrate 2 on the sideopposite to the channel formation region 3 sandwiching the insulatingregion 9 between them, the n-type drain region 6 with impurityconcentration higher than that of the offset region 4 is formed. Also,the drain region 6 is formed, and inside the surface of the siliconsubstrate 2 on the side opposite to the drain region 6 sandwiching thechannel formation region 3 between them, the n-type source region 5 withimpurity concentration higher than that of the offset region 4 isformed.

For example, the source region 5 and the drain region 6 can be formed byimplanting an arsenic ion into the region where the source region 5 andthe drain region 6 are to be formed and by applying heat treatment.

Subsequently, as illustrated in FIG. 51, the insulating film 12, thecontacts 13 to 15, and the wires 16 to 18 are sequentially formed.

The semiconductor device 1 can be manufactured as above.

A known technology can be applied to formation of the element separationlayer, not shown, and the description will be omitted.

According to the embodiment, the liner layer can be formed along themoving path (current path) of the carrier. Thus, a semiconductor devicethat can reduce electric resistance and improve a breakdown voltage canbe produced efficiently.

Sixth Embodiment

FIGS. 6A to 6I are process cross-sectional views illustrating a methodfor manufacturing the semiconductor device according to the sixthembodiment. Also, FIGS. 6A to 61 exemplify an example in which thesemiconductor device 20 to be manufactured is a power MOSFET.

FIGS. 6A to 6I illustrate a state in which a semiconductor device isformed on a region divided by the element separation layer (DTI; DeepTrench Isolation), PN-junction separation or the like, not shown.

First, as illustrated in FIG. 6A, the trench 27 a is formed in thesurface region of the silicon substrate 22 and the trench 27 b is formedin the surface region of the silicon substrate 22. That is, the trench27 a is formed in the region where the offset region 24 a of the p-typeor n-type silicon substrate 22 is formed. Also, the trench 27 b isformed in the region where the offset region 24 b adjacent to the offsetregion 24 a is formed.

In this case, for example, the trenches 27 a and 27 b can be formed byetching the silicon substrate 22 by using the RIE (Reactive Ion Etching)method, for example.

Subsequently, as illustrated in FIG. 6B, the liner layer 28 a is formedinside the trench 27 a, and the liner layer 28 b is formed inside thetrench 27 b. That is, a film 68 which becomes the liner layers 28 a and28 b is formed on the surface of the silicon substrate 22 and inside thetrenches 27 a and 27 b. The formation of the film 68 can be made byusing the CVD (Chemical Vapor Deposition) method, for example.

The film 68 may be a film formed of a material having a lattice constantdifferent from the lattice constant of silicon. For example, the filmmay be formed at least either of silicon nitride and silicon oxidenitride.

In this case, at least either of the liner layer 28 a and the linerlayer 28 b is formed of a material having the lattice constant differentfrom the lattice constant of silicon. In this case, it is preferablethat both the liner layers 28 a and 28 b are formed of a material havingthe lattice constant different from the lattice constant of silicon.

Also, as described above, the film may be formed of a conductivematerial such as silicon germanium.

However, if the film is formed of a conductive material, the film is tobe formed at a predetermined location such as on the lower faces of thetrenches 27 a and 27 b as described above.

In this case, at least either of the liner layer 28 c and the linerlayer 28 d exemplified in FIG. 4 may be formed of a conductive materialhaving the lattice constant different from the lattice constant ofsilicon. In this case, it is preferable that both the liner layers 28 cand 28 d are formed of a conductive material having the lattice constantdifferent from the lattice constant of silicon.

The example in which the film to be formed is a single layer isexemplified, but the film may also be formed of a plurality of layers.

Subsequently, as illustrated in FIG. 6C, a film 69 which becomes theinsulating regions 29 a and 29 b is formed. At this time, the insides ofthe trenches 27 a and 27 b are filled with the film 69 to be formed.

That is, the insulating regions 29 a and 29 b are formed by burying theinsulating material inside the trenches 27 a and 27 b on which the film68 which becomes the liner layers 28 a and 28 b has been formed.

The formation of the film 69 can be made by using the CVD (ChemicalVapor Deposition) method, for example.

The film 69 may be formed of an insulating material such as siliconoxide, for example.

Subsequently, as illustrated in FIG. 6D, flattening is performed untilthe surface of the silicon substrate 22 is exposed. The flattening maybe performed by using a CMP (Chemical Mechanical Polishing) method, forexample.

By performing such flattening, the liner layers 28 a and 28 b are formedinside the trenches 27 a and 27 b, and the insulating material (theinsulating regions 29 a and 29 b) are buried inside the trenches 27 aand 27 b.

Subsequently, as illustrated in FIG. 6E, the gate insulating film 30 isformed on the surface of the silicon substrate 22. That is, the surfaceof the silicon substrate 22 is oxidized, and the gate insulating film 30is formed. The formation of the gate insulating film 30 can be made byusing a thermal oxidation method, for example.

Subsequently, as illustrated in FIG. 6F, the channel formation region 23and the offset regions 24 a and 24 b are formed.

That is, the n-type offset region 24 b is formed inside the surface ofthe silicon substrate 22 which includes the region where the trench 27 bhas been formed, and the n-type offset region 24 a is formed inside thesurface of the silicon substrate 22 which includes the region where thetrench 27 a has been formed.

For example, the channel formation region 3 and the offset regions 24 aand 24 b can be formed by implanting a boron ion into the region wherethe channel formation region 23 is to be formed, by implanting aphosphorous ion into the regions where the offset regions 24 a and 24 bare to be formed, and by applying heat treatment.

Subsequently, as illustrated in FIG. 6G, the gate electrode 31 isformed.

That is, the gate electrode 31 is formed through the gate insulatingfilm 30 formed on the surface of the channel formation region 23 and theoffset regions 24 a and 24 b.

The gate electrode 31 may be formed of polysilicon into which impuritiesare introduced, for example.

Subsequently, as illustrated in FIG. 6H, the source region 25 and thedrain region 26 are formed.

That is, inside the surface of the silicon substrate 22 on the sideopposite to the channel formation region 23 sandwiching the insulatingregion 29 b between them, the n-type drain region 26 with impurityconcentration higher than that of the offset region 24 b is formed.

Also, the drain region 26 is formed, and inside the surface of thesilicon substrate 22 on the side opposite to the drain region 26sandwiching the channel formation region 23 and the insulating region 29a between them, the n-type source region 25 with impurity concentrationhigher than that of the offset region 24 b is formed.

For example, the source region 25 and the drain region 26 can be formedby implanting an arsenic ion into the region where the source region 25and the drain region 26 are to be formed and by applying heat treatment.Subsequently, as illustrated in FIG. 61, the insulating film 32, thecontacts 13 to 15, and the wires 16 to 18 are sequentially formed.

The semiconductor device 20 can be manufactured as above.

A known technology can be applied to formation of the element separationlayer and the like, not shown, and the description will be omitted.

According to the embodiment, the liner layer can be formed along themoving path (current path) of the carrier. Thus, a semiconductor devicethat can reduce electric resistance and improve a breakdown voltage canbe produced efficiently.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

For example, the shape, dimension, material, arrangement, quantity andthe like of each element provided in the semiconductor devices 1, 1 a,20, 20 a and the like are not limited to those exemplification but canbe changed as appropriate. Also, the example using the n-type MOSFET isexemplified above, but the invention can be applied also to the p-typeMOSFET.

What is claimed is:
 1. A semiconductor device comprising: a channel formation region of first conductivity type; a first offset region of second conductivity type; a first insulating region buried in the surface of the first offset region; a first liner layer provided between the first offset region and the first insulating region; a first semiconductor region of second conductivity type provided on the side opposite to the channel formation region sandwiching the first insulating region therebetween and having impurity concentration higher than that of the first offset region; a second semiconductor region of second conductivity type provided on the side opposite to the first semiconductor region sandwiching the channel formation region therebetween and having impurity concentration higher than that of the first offset region; a gate insulating film provided on the channel formation region and the first offset region; and a gate electrode provided on the gate insulating film.
 2. The device according to claim 1, further comprising: a second offset region provided between the channel formation region and the second semiconductor region and having impurity concentration lower than that of the second semiconductor region; a second insulating region buried in the surface of the second offset region; and a second liner layer provided between the second offset region and the second insulating region.
 3. The device according to claim 2, at least either of the first liner layer and the second liner layer is provided along a moving path of a carrier.
 4. The device according to claim 1, wherein the first liner layer is provided at least below the first insulating region.
 5. The device according to claim 2, wherein the second liner layer is provided at least below the second insulating region.
 6. The device according to claim 2, at least either of the first liner layer and the second liner layer is formed of a material having a lattice constant different from the lattice constant of silicon.
 7. The device according to claim 2, at least either of the first liner layer and the second liner layer is formed of a material which generates tensile stress in silicon.
 8. The device according to claim 6, wherein the material having the lattice constant different from the lattice constant of silicon is at least either of silicon nitride and silicon oxide nitride.
 9. The device according to claim 6, wherein the material having the lattice constant different from the lattice constant of silicon is a conductive material.
 10. The device according to claim 9, wherein the conductive material is obtained by adjusting the lattice constant by means of solid solution of another semiconductor substance in silicon.
 11. The device according to claim 1, wherein the thickness of the first liner layer is 10 nm or more and 20 nm or less.
 12. The device according to claim 2, wherein the thickness of the second liner layer is 10 nm or more and 20 nm or less.
 13. A method for manufacturing a semiconductor device comprising: forming a first trench in the surface of a substrate; forming a first liner layer inside the first trench; forming a first insulating region by burying an insulating material inside the first trench on which the first liner layer has been formed; forming an insulating film on the surface of the substrate; forming a channel formation region of first conductivity type inside the surface of the substrate which does not include a region where the first trench has been formed; forming a first offset region of second conductivity type inside the surface of the substrate which includes a region where the first trench has been formed; forming a first semiconductor region of second conductivity type having impurity concentration higher than that of the first offset region inside the surface of the substrate on the side opposite to the channel formation region sandwiching the first insulating region therebetween; forming a second semiconductor region of second conductivity type having impurity concentration higher than that of the first offset region inside the surface of the substrate on the side opposite to the first semiconductor region sandwiching the channel formation region therebetween along with the forming the first semiconductor region; and forming a gate electrode through the insulating film formed on the surfaces of the channel formation region and the first offset region.
 14. The method according to claim 13, further comprising: forming a second trench in the surface of the substrate along with the forming the first trench; forming a second liner layer inside the second trench along with the forming the first liner layer; and forming a second offset region of second conductivity type inside the surface of the substrate which includes a region where the second trench has been formed along with the forming the first offset region.
 15. The method according to claim 13, in the forming the first liner layer inside the first trench, the first liner layer is provided at least on the lower face of the first trench.
 16. The method according to claim 14, in the forming the second liner layer inside the second trench along with the forming the first liner layer, the second liner layer is provided at least on the lower face of the second trench.
 17. The method according to claim 14, at least either of the first liner layer and the second liner layer is formed of a material having a lattice constant different from the lattice constant of silicon.
 18. The method according to claim 14, at least either of the first liner layer and the second liner layer is formed of a material which generates tensile stress in silicon.
 19. The method according to claim 17, wherein the material having the lattice constant different from the lattice constant of silicon is at least either of silicon nitride and silicon oxide nitride.
 20. The method according to claim 17, wherein the material having the lattice constant different from the lattice constant of silicon is a conductive material. 